Data Sheet
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSQ100 Rev. 1.0.2 5
FSQ100 — Green Mode Fairchild Power Switch (FPS
TM
)
Electrical Characteristics
T
A
= 25°C, unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
SenseFET Section
I
DSS
Zero-Gate-Voltage Drain Current
V
DS
=650V, V
GS
=0V 25
µA
V
DS
=520V, V
GS
=0V, T
C
=125C
200
R
DS(ON)
Drain-Source On-State Resistance
(5)
V
GS
=10V, I
D
=0.5A 16 22 Ω
g
fs
Forward Trans-Conductance V
DS
=50V, I
D
=0.5A 1.0 1.3 S
C
ISS
Input Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
162
pF C
OSS
Output Capacitance 18
C
RSS
Reverse Transfer Capacitance 3.8
Control Section
f
OSC
Switching Frequency 61 67 73 kHz
Δf
OSC
Switching Frequency Variation
(6)
-25°C ≤ T
A
≤ 85°C ±5 ±10 %
D
MAX
Maximum Duty Cycle 60 67 74 %
V
START
UVLO Threshold Voltage
V
FB
=GND 8 9 10 V
V
STOP
V
FB
=GND 6 7 8 V
I
FB
Feedback Source Current 0V ≤ V
FB
≤ 3V 0.35 0.40 0.45 mA
t
S/S
Internal Soft Start Time 10 15 20 ms
Burst Mode Section
V
BURH
Burst Mode Voltage
T
J
=25°C
0.6 0.7 0.8 V
V
BURL
0.45 0.55 0.65 V
V
BUR(HYS)
Hysteresis 150 mV
Protection Section
I
LIM
Peak Current Limit 0.475 0.550 0.650 A
T
SD
Thermal Shutdown Temperature
(7)
125 145 °C
V
SD
Shutdown Feedback Voltage 4.0 4.5 5.0 V
V
OVP
Over-Voltage Protection 20 V
I
DELAY
Shutdown Delay Current 3V ≤ V
FB
≤ V
SD
4 5 6 µA
Total Device Section
I
OP
Operating Supply Current
(8)
V
CC
≤ 16V 1.5 3.0 mA
I
CH
Startup Charging Current V
CC
=0V , V
STR
=50V 450 550 650 µA
Notes:
5. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.
6. These parameters, although guaranteed, are tested in EDS (wafer test) process.
7. These parameters, although guaranteed, are not 100% tested in production.
8. Control part only.