Data Sheet
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSFR1800 / FSFR1700-HS • Rev.1.0.1 4
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Unit
V
DS
Maximum Drain-to-Source Voltage (DL-CTR and CTR-PG) 500 V
LV
CC
Low-Side Supply Voltage -0.3 25.0 V
HV
CC
to CTR High-Side V
CC
Pin to Low-Side Drain Voltage -0.3 25.0 V
HV
CC
High-Side Floating Supply Voltage -0.3 525.0 V
V
RT
Timing Resistor Connecting and Auto-Restart Pin Voltage -0.3 5.0 V
V
LS
Line Sensing Input Voltage -0.3 LV
CC
V
V
CS
Current Sense (CS) Pin Input Voltage -5 1 V
f
sw
Recommended Switching Frequency 10 600 kHz
dV
CTR
/dt Allowable Low-Side MOSFET Drain Voltage Slew Rate 50 V/ns
P
D
Total Power Dissipation
(4)
FSFR1800HS/L 11.7
W
FSFR1700HS/L 11.6
T
J
Maximum Junction Temperature
(5)
+150
°C
Recommended Operating Junction Temperature
(5)
-40 +130
T
STG
Storage Temperature Range -55 +150
°C
MOSFET Section
V
DGR
Drain Gate Voltage (R
GS
=1 MΩ)
500 V
V
GS
Gate Source (GND) Voltage ±30 V
I
DM
Drain Current Pulsed
(6)
FSFR1800HS/L 23
A
FSFR1700HS/L 20
I
D
Continuous Drain Current
FSFR1800HS/L
T
C
=25°C 7.0
A
T
C
=100°C 4.5
FSFR1700HS/L
T
C
=25°C 6.0
T
C
=100°C 3.9
Package Section
Torque Recommended Screw Torque 5~7 kgf·cm
Notes:
3. These parameters, although guaranteed, are tested only in EDS (wafer test) process.
4. Per MOSFET when both MOSFETs are conducting.
5. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
6. Pulse width is limited by maximum junction temperature.
Thermal Impedance
T
A
=25°C unless otherwise specified.
Symbol Parameter Value Unit
θ
JC
Junction-to-Case Center Thermal Impedance
(Both MOSFETs Conducting)
FSFR1800HS/L 10.7
ºC/W
FSFR1700HS/L
10.8
θ
JA
Junction-to-Ambient Thermal Impedance
FSFR1800HS/L
FSFR1700HS/L
80 ºC/W