Data Sheet

FSBB20CH60CL Motion SPM® 3 Series
©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FSBB20CH60CL Rev. C3
Bootstrap Diode Part
Figure 6. Built-in Bootstrap Diode Characteristics
2nd Notes:
6. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Unit
V
F
Forward Voltage I
F
= 0.1 A, T
C
= 25°C - 2.5 - V
t
rr
Reverse Recovery Time I
F
= 0.1 A, T
C
= 25°C - 80 - ns
Symbol Parameter Conditions Min. Typ. Max. Unit
V
PN
Supply Voltage Applied between P - N
U
, N
V
, N
W
- 300 400 V
V
CC
Control Supply Voltage Applied between V
CC(H)
, V
CC(L)
- COM 13.5 15.0 16.5 V
V
BS
High-Side Bias Voltage Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
13.0 15.0 18.5 V
dV
CC
/ dt,
dV
BS
/ dt
Control Supply Variation -1 - 1 V /
s
t
dead
Blanking Time for Preventing
Arm-Short
Each Input Signal 2 - - s
f
PWM
PWM Input Signal -40C T
C
 125°C, -40C T
J
150°C - - 20 kHz
V
SEN
Voltage for Current Sensing Applied between N
U
, N
V
, N
W
- COM
(Including Surge Voltage)
-4 4 V
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-in Bootstrap Diode V
F
-I
F
Characteristic
T
C
=25
o
C
I
F
[A]
V
F
[V]