Data Sheet

FSBB20CH60CL Motion SPM® 3 Series
©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FSBB20CH60CL Rev. C3
Absolute Maximum Ratings (T
J
= 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM
®
3 product is 150C (at T
C
 125C).
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
2nd Notes:
2. For the measurement point of case temperature (T
C
), please refer to Figure 2.
Symbol Parameter Conditions Rating Unit
V
PN
Supply Voltage Applied between P - N
U
, N
V
, N
W
450 V
V
PN(Surge)
Supply Voltage (Surge) Applied between P - N
U
, N
V
, N
W
500 V
V
CES
Collector - Emitter Voltage 600 V
± I
C
Each IGBT Collector Current T
C
= 25°C, T
J
150°C 20 A
± I
CP
Each IGBT Collector Current (Peak) T
C
= 25°C, T
J
 150°C, Under 1 ms Pulse
Width
40 A
P
C
Collector Dissipation T
C
= 25°C per Chip 62 W
T
J
Operating Junction Temperature (2nd Note 1) - 40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
V
CC
Control Supply Voltage Applied between V
CC(H)
, V
CC(L)
- COM 20 V
V
BS
High-Side Control Bias Voltage Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
20 V
V
IN
Input Signal Voltage Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
,
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
-0.3 ~ V
CC
+ 0.3 V
V
FO
Fault Output Supply Voltage Applied between V
FO
- COM -0.3 ~ V
CC
+ 0.3 V
I
FO
Fault Output Current Sink Current at V
FO
pin 5 mA
V
SC
Current-Sensing Input Voltage Applied between C
SC
- COM -0.3 ~ V
CC
+ 0.3 V
Symbol Parameter Conditions Rating Unit
V
RRM
Maximum Repetitive Reverse Voltage 600 V
I
F
Forward Current T
C
= 25°C, T
J
150°C 0.5 A
I
FP
Forward Current (Peak) T
C
= 25°C, T
J
150°C Under 1 ms Pulse
Width
2.0 A
T
J
Operating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
V
PN(PROT)
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
V
CC
= V
BS
= 13.5 ~ 16.5 V
T
J
= 150°C, Non-Repetitive, < 2 s
400 V
T
C
Module Case Operation Temperature -40CT
J
 150C, See Figure 2 -40 ~ 125 °C
T
STG
Storage Temperature -40 ~ 125 °C
V
ISO
Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
2500 V
rms
Symbol Parameter Conditions Min. Typ. Max. Unit
R
th(j-c)Q
Junction to Case Thermal Resistance Inverter IGBT part (per 1 / 6 module) - - 2.0 °C / W
R
th(j-c)F
Inverter FWDi part (per 1 / 6 module) - - 3.0 °C / W