Data Sheet

FSB50250US Motion SPM® 5 Series
©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FSB50250US Rev. C4
Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Control Part (each HVIC unless otherwise specified.)
Thermal Resistance
Total System
1st Notes:
1. For the measurement point of case temperature T
C
, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Symbol Parameter Conditions Rating Unit
V
DSS
Drain-Source Voltage of Each MOSFET 500 V
*I
D 25
Each MOSFET Drain Current, Continuous T
C
= 25°C 1.1 A
*I
D 80
Each MOSFET Drain Current, Continuous T
C
= 80°C 0.8 A
*I
DP
Each MOSFET Drain Current, Peak T
C
= 25°C, PW < 100 s 2.8 A
*P
D
Maximum Power Dissipation T
C
= 25°C, For Each MOSFET 13 W
Symbol Parameter Conditions Rating Unit
V
CC
Control Supply Voltage Applied Between V
CC
and COM 20 V
V
BS
High-side Bias Voltage Applied Between V
B
and V
S
20 V
V
IN
Input Signal Voltage Applied Between IN and COM -0.3 ~ V
CC
+ 0.3 V
Symbol Parameter Conditions Rating Unit
R
JC
Junction to Case Thermal Resistance
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
9.3
°C/W
Symbol Parameter Conditions Rating Unit
T
J
Operating Junction Temperature -40 ~ 150 °C
T
STG
Storage Temperature -40 ~ 125 °C
V
ISO
Isolation Voltage
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
1500 V
rms