Data Sheet

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4
FSA2567 — Low-Power, Dual SIM Card Analog Switch
DC Electrical Characteristics
All typical values are at 25°C, 3.3 V V
CC
unless otherw ise specified.
Symbol Parameter Conditions V
CC
(V)
T
A
=- 40ºC to +85ºC
Units
Min. Typ. Max.
V
IK
Clamp Diode Voltage I
IN
= -18 mA 2.7 -1.2 V
V
IH
Input Voltage High
1.65 to 2.3 1.1
V 2.7 to 3.6 1.3
4.3 1.7
V
IL
Input Voltage Low
1.65 to 2.3 0.4
V 2.7 to 3.6 0.5
4.3 0.7
I
IN
Control Input Leakage V
SW
= 0 to V
CC
4.3 -1 1 µA
I
nc(off),
I
no(off),
Off State Leakage
nRST, nDA T, nCLK, nV
SIM
= 0.3 V
or 3.6 V
Figure 10
4.3 -60 60 nA
R
OND
Data Path Sw itch On
Resistance
(3)
V
SW
= 0, 1.8 V, I
ON
= -20 mA
Figure 9
1.8 7.0 12.0
Ω
V
SW
= 0, 2.3 V, I
ON
= -20 mA
Figure 9
2.7 6.0 10.0
R
ONV
V
SIM
Sw itch
On Resistance
(3)
V
SW
= 0, 1.8V, I
ON
= -100mA
Figure 9
1.8 0.5 0.7
Ω
V
SW
= 0, 2.3 V, I
ON
= -100 mA
Figure 9
2.7 0.4 0.6
∆R
OND
Data Path Delta
On Resistance
(4)
V
SW
= 0 V, I
ON
= -20 mA 2.7 0.2 Ω
I
CC
Quiescent Supply
Current
V
CNTRL
= 0 or V
CC
, I
OUT
= 0 4.3 1.0 µA
I
CCT
Increase in I
CC
Current
Per Control Voltage
and V
CC
V
CNTRL
= 2.6 V, V
CC
= 4.3 V 4.3 5.0 10.0 µA
V
CNTRL
= 1.8 V, V
CC
= 4.3 V 4.3 7.0 15.0 µA
Note s:
3. Measured by the voltage drop betw een nDAT, nRST, nCLK and relative common port pins at the indicated current
through the sw itch. On resistance is determined by the low er of the voltage on the relative ports.
4. Guaranteed by characterization.