Data Sheet

Package Marking and Ordering Information
www.fairchildsemi.com
2
FQD11P06 / FQU11P06 — P-Channel QFET
®
MOSFET
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Part Number Top Mark
Package Reel Size Tape Width Quantity
FQD11P06FQD11P06TM D-PAK 330 mm 16 mm
2500 units
Packing Method
Tape and Reel
Notes:
1.
Repetitive rating : pulse-width limited by maximum junction temperature.
2.
L = 2.1 mH, I
AS
= -9.4 A, V
DD
= -25 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ -11.4 A, di/dt ≤ 300 A/µs, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4.
Essentially independent of operating temperature.
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 µA
-60 -- -- V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250 µA, Referenced to 25°C
-- -0.07 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -60 V, V
GS
= 0 V
-- -- -1 µA
V
DS
= -48 V, T
C
= 125°C
-- -- -10 µA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= -25 V, V
DS
= 0 V
-- -- -100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= 25 V, V
DS
= 0 V
-- -- 100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 µA
-2.0 -- -4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -10 V, I
D
= -4.7 A
-- 0.15 0.185 Ω
g
FS
Forward Transconductance
V
DS
= -30 V, I
D
= -4.7 A
-- 4.9 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 420 550 pF
C
oss
Output Capacitance -- 195 250 pF
C
rss
Reverse Transfer Capacitance -- 45 60 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -30 V, I
D
= -5.7 A,
R
G
= 25 Ω
(Note 4)
-- 6.5 25 ns
t
r
Turn-On Rise Time -- 40 90 ns
t
d(off)
Turn-Off Delay Time -- 15 40 ns
t
f
Turn-Off Fall Time -- 45 100 ns
Q
g
Total Gate Charge
V
DS
= -48 V, I
D
= -11.4 A,
V
GS
= -10 V
(Note 4)
-- 13 17 nC
Q
gs
Gate-Source Charge -- 2.0 -- nC
Q
gd
Gate-Drain Charge -- 6.3 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -9.4 A
-- -- -4.0 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= -11.4 A,
dI
F
/ dt = 100 A/µs
-- 83 -- ns
Q
rr
Reverse Recovery Charge -- 0.26 -- µC
©2000 Fairchild Semiconductor Corporation
FQD11P06
/ FQU11P06 Rev. C2
FQU11P06FQU11P06TU I-PAK N/A N/A
70 units
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