Data Sheet

FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package
Electrical Characteristics
Appl
y over all recommended conditions (T
A
= -40°C to +125°C unless otherwise specified).
All typical values are measured at T
A
= 25°C.
Symbol Parameter Conditions Min. Typ. Max. Unit
Emitter
V
F
Forward Voltage
I
F
= 1 mA
1.00 1.35 1.80 V
V
F
/ T
A
Forward-Voltage Coefficient
I
F
= 1 mA
-1.6 mV / °C
I
R
Reverse Current
V
R
= 6 V
10 µA
C
T
Terminal Capacitance V = 0 V, f = 1 MHz 30 pF
Detector
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 0.5 mA, I
F
= 0 mA
75 130 V
BV
ECO
Emitter-Collector Breakdown
Voltage
I
E
= 100 µA, I
F
= 0 mA
7 12 V
I
CEO
Collector Dark Current
V
CE
= 75 V, I
F
= 0 mA,
T
A
= 25°C
100 nA
V
CE
= 50 V, I
F
= 0 mA
50 µA
V
CE
= 5 V, I
F
= 0 mA
30 µA
C
CE
Capacitance
V
CE
= 0 V, f = 1 MHz
8 pF
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