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FODM8801X — OptoHiT™ Series, High-Temperature Phototransistor Optocoupler in Half-Pitch Mini-Flat 4-Pin Package

Publication Order Number:

FODM8801A/D

October-2017, Rev. 2

FODM8801A, FODM8801B, FODM8801C

OptoHiT™ Series, High-Temperature Phototransistor

Optocoupler in Half-Pitch Mini-Flat 4-Pin Package

Features

• Utilizing Proprietary Process Technology to Achieve

High Operating Temperature: up to 125°C

• Guaranteed Current Transfer Ratio (CTR)

Specifications Across Full Temperature Range

– Excellent CTR Linearity at High-Temperature

– CTR at Very Low Input Current, I

• High Isolation Voltage Regulated by Safety Agency:

C-UL / UL1577, 3750 VAC

RMS

for 1 minute and

DIN EN/IEC60747-5-5

• Compact Half-Pitch, Mini-Flat, 4-Pin Package

(1.27 mm Lead Pitch, 2.4 mm Maximum Standoff

Height)

• > 5 mm Creepage and Clearance Distance

• Applicable to Infrared Ray Reflow, 245°C

Applications

• Primarily Suited for DC-DC Converters

• Ground-Loop Isolation, Signal-Noise Isolation

• Communications – Adapters, Chargers

• Consumer – Appliances, Set-Top Boxes

• Industrial – Power Supplies, Motor Control,

Programmable Logic Control

Description

In the OptoHiT™ series, the FODM8801 is a first-of-kind

phototransistor, utilizing ON Semiconductor’s

leading-edge proprietary process technology to

achieve high operating temperature characteristics, up

to 125°C. The opto-coupler consists of an

aluminum gallium arsenide (AlGaAs) infrared light-

emitting diode (LED) optically coupled to a

phototransistor, available in a compact half-pitch, mini-

flat, 4-pin package. It delivers high current transfer

ratio at very low input current. The input-output

isolation voltage, V

ISO

, is rated at 3750 VAC

RMS

Schematic Package

EMITTER

COLLECTORANODE

CATHODE

Figure 1. Schematic

Figure 2. Half-Pitch Mini-Flat

Summary of content (13 pages)

PAGE 1
Features Description • Utilizing Proprietary Process Technology to Achieve High Operating Temperature: up to 125°C • Guaranteed Current Transfer Ratio (CTR) Specifications Across Full Temperature Range – Excellent CTR Linearity at High-Temperature – CTR at Very Low Input Current, IF • High Isolation Voltage Regulated by Safety Agency: C-UL / UL1577, 3750 VACRMS for 1 minute and DIN EN/IEC60747-5-5 • Compact Half-Pitch, Mini-Flat, 4-Pin Package (1.27 mm Lead Pitch, 2.
PAGE 2
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I–IV I–III < 300 VRMS 40/125/21 Climatic Classification Pollution Degree (DIN VDE 0110/1.
PAGE 3
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
PAGE 4
Symbol Parameter Conditions Min. Typ. Max. Unit 1.00 1.35 1.80 V Emitter VF Forward Voltage IF = 1 mA Forward-Voltage Coefficient IF = 1 mA IR Reverse Current VR = 6 V CT Terminal Capacitance V = 0 V, f = 1 MHz BVCEO Collector-Emitter Breakdown Voltage IC = 0.5 mA, IF = 0 mA BVECO Emitter-Collector Breakdown Voltage IE = 100 µA, IF = 0 mA VF / TA -1.
PAGE 5
Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Symbol Parameter Device FODM8801A CTRCE Current Transfer Ratio FODM8801B (Collector-Emitter) FODM8801C FODM8801A Saturated Current CTRCE(SAT) Transfer Ratio FODM8801B (Collector-Emitter) FODM8801C FODM8801A VCE(SAT) Saturation Voltage FODM8801B FODM8801C Conditions Min. Typ. Max. IF = 1.0 mA, VCE = 5 V @ TA = 25°C 80 120 160 IF = 1.
PAGE 6
Apply over all recommended conditions (TA = -40°C to +125°C unless otherwise specified). All typical values are measured at TA = 25°C. Symbol tON tOFF tR tF Parameter Turn-On Time Turn-Off Time Output Rise Time (10% to 90%) Output Fall Time (90% to 10%) CMH Common-Mode Rejection Voltage (Transient Immunity) – Output High CML Common-Mode Rejection Voltage (Transient Immunity) – Output Low Device All Devices All Devices Conditions Min. Typ. Max. IF = 1.6 mA, VCC = 5 V, RL = 0.
PAGE 7
100 100 IC – COLLECTOR CURRENT (mA) IF – FORWARD CURRENT (mA) TA = 25°C 10 TA = 125°C = 25°C TA = -40°C 1.0 0.1 1.0 1.2 1.1 1.3 1.4 1.5 1.6 1.7 VCE = 5.0 V 10 VCE = 0.4 V 1.0 0.1 0.1 1.8 1 VF – FORWARD VOLTAGE (V) Figure 3. Forward Current vs. Forward Voltage VCE = 5 V TA = 25°C 100 1 10 10 VCE = 5 V TA = 25°C NORMALIZED TO IF = 1 mA 1.0 0.1 0.1 100 1 IF – FORWARD CURRENT (mA) 100 Figure 6. Normalized CTR vs. Forward Current 1.2 1.2 VCE = 2 V VCE = 5 V 1.0 0.
PAGE 8
100 40 TA = 25°C 35 IC – COLLECTOR CURRENT (mA) IC – COLLECTOR CURRENT (mA) VCE = 5 V IF = 20 mA IF = 10 mA IF = 5.0 mA 10 IF = 3.0 mA IF = 1.6 mA IF = 1.0 mA 1.0 IF = 0.5 mA 30 IF = 15 mA 25 IF = 20 mA 20 IF = 10 mA 15 IF = 5 mA 10 5 0.1 -40 -20 0 20 40 60 80 100 0 120 IF = 1 mA 0 1 Figure 9. Collector Current vs. Ambient Temperature 4 5 1000 VCE = 5 V TA = 25°C IF = 1.
PAGE 9
+5 V IF Pulse Generator: tr = 5 ns ZO = 50 Ω PW = 50 μs DC = 1% RL = 4.7 kΩ + IF Monitor 1 4 2 3 VO VO Monitoring Node GND RM (IF = 1.6 mA) Input Pulse tR tF 5V 90% Output Pulse 10% VOL tON tOFF Figure 15. Test Circuit for Propagation Delay, Rise Time, and Fall Time +5 V IF RL = 4.7 kΩ + 1 4 2 3 SW VO Monitoring Node GND RM VCM Pulse Gen 1 kV VCM 90% 10% 0V VOH VO (IF = 0 mA) 2V 0.8 V VO (IF = 1.6 mA) VOL Figure 16.
PAGE 10
260 T P 245 240 220 TL Temperature (°C) 200 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL 180 160 Tsmin 140 ts 120 100 80 60 40 20 0 120 240 360 Time 25°C to Peak Figure 13.
PAGE 11
Part Number Package Packing Method FODM8801A Half Pitch Mini-Flat 4-Pin Tube (100 units) FODM8801AR2 Half Pitch Mini-Flat 4-Pin Tape and Reel (2500 Units) FODM8801AV Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tube (100 Units) FODM8801AR2V Half Pitch Mini-Flat 4-Pin, DIN EN/IEC60747-5-5 Option Tape and Reel (2500 Units) Note: 8. The product orderable part number system listed in this table also applies to the FODM8801B, FODM8801C products.
PAGE 12
K0 P2 P0 t D0 E A0 W1 W B0 d F D1 P 1.27 Pitch Symbol Dimensions (mm) Tape Width W 12.00 +0.30 / -0.10 Tape Thickness t Sprocket Hole Pitch P0 4.00 ±0.10 Sprocket Hole Diameter D0 1.50 +0.10 / -0.0 Sprocket Hole Location E 1.75 ±0.10 Pocket Location F 5.50 ±0.10 P2 2.00 ±0.10 Pocket Pitch P 8.00 ±0.10 Pocket Dimension A0 2.80 ±0.10 B0 7.30 ±0.10 Description 0.30 ±0.05 K0 2.30 ±0.10 Pocket Hole Diameter D1 1.50 Min. Cover Tape Width W1 9.
PAGE 13
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