Data Sheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODM121 Series, FODM124, FODM2701, FODM2705 Rev. 1.7 4
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Note:
2. Steady state isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
common, and pins 3 and 4 are common.
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
V
F
Forward Voltage
FODM121 Series,
FODM124
I
F
= 10 mA 1.0 1.3
V
FODM2701 I
F
= 5 mA
1.4
FODM2705 I
F
= ±5 mA
I
R
Reverse Current
FODM121 Series,
FODM124,
FODM2701
V
R
= 5 V 5 µA
Detector
BV
CEO
Collector-Emitter
Breakdown Voltage
FODM121 Series,
FODM124
I
C
= 1 mA, I
F
= 0
80
V
FODM2701,
FODM2705
40
BV
ECO
Emitter-Collector
Breakdown Voltage
All I
E
= 100 µA, I
F
= 0 7 V
I
CEO
Collector Dark Current All V
CE
= 40 V, I
F
= 0 100 nA
C
CE
Capacitance All V
CE
= 0 V, f = 1 MHz 10 pF
TRANSFER CHARACTERISTICS
CTR
DC Current Transfer
Ratio
FODM2701 I
F
= 5 mA, V
CE
= 5 V 50 300
%
FODM2705 I
F
= ±5 mA, V
CE
= 5 V 50 300
FODM121
I
F
= 5 mA, V
CE
= 5 V
50 600
FODM121A 100 300
FODM121B 50 150
FODM121C 100 200
FODM124
I
F
= 1 mA, V
CE
= 0.5 V 100 1200
I
F
= 0.5 mA, V
CE
= 1.5 V 50
CTR Symmetry FODM2705 I
F
= ±5 mA, V
CE
= 5 V 0.3 3.0
V
CE(SAT)
Saturation Voltage
FODM121 Series I
F
= 8 mA, I
C
= 2.4 mA 0.4
V
FODM124 I
F
= 1 mA, I
C
= 0.5 mA 0.4
FODM2701 I
F
= 10 mA, I
C
= 2 mA 0.3
FODM2705 I
F
= ±10 mA, I
C
= 2 mA 0.3
t
r
Rise Time
(Non-Saturated)
All
I
C
= 2 mA, V
CE
= 5 V,
R
L
= 100 Ω
3µs
t
f
Fall Time
(Non-Saturated)
All
I
C
= 2 mA, V
CE
= 5 V,
R
L
= 100 Ω
3µs
ISOLATION CHARACTERISTICS
V
ISO
Steady State Isolation
Voltage
(2)
All
1 minute 3750 VAC
RMS