Data Sheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD852 Rev. 1.5 4
FOD852 — 4-Pin DIP Photodarlington Output Optocoupler
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Note:
2. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Input
V
F
Forward Voltage I
F
= 10 mA 1.2 1.4 V
I
R
Reverse Current V
R
= 4 V 10 µA
C
t
Terminal Capacitance V = 0, f = 1 kHz 30 250 pF
Output
I
CEO
Collector Dark Current V
CE
= 200 V, I
F
= 0 200 nA
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 0.1 mA, I
F
= 0 300 V
BV
ECO
Emitter-Collector Breakdown Voltage I
E
= 10 µA, I
F
= 0 0.1 V
Symbol DC Characteristic Test Conditions Min. Typ. Max. Unit
I
C
Collector Current
I
F
= 1 mA, V
CE
= 2 V
10 40 150 mA
CTR Current Transfer Ratio
(2)
1,000 4,000 15,000 %
V
CE(SAT)
Collector-Emitter
Saturation Voltage
I
F
= 20 mA, I
C
= 100 mA 1.2 V
f
C
Cut-Off Frequency V
CE
= 2 V, I
C
= 20 mA, R
L
= 100 , -3 dB 1 7 kHz
t
R
Response Time (Rise)
V
CE
= 2 V, I
C
= 20 mA, R
L
= 100
100 300 µs
t
F
Response Time (Fall) 20 100 µs
Symbol Characteristic Test Conditions Min. Typ. Max. Units
V
ISO
Input-Output Isolation
Voltage
f = 60 Hz, t = 1 minute, I
I-O
2 µA 5000 VAC
RMS
R
ISO
Isolation Resistance V
I-O
= 500 V
DC
10
12
C
ISO
Isolation Capacitance V
I-O
= 0, f = 1 MHz 0.6 1.0 pf