Data Sheet
FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25°C Unless otherwise specified.
Symbol Parameter
Value
Unit
FOD814 FOD817
Total Device
T
STG
Storage Temperature -55 to +150 °C
T
OPR
Operating Temperature -55 to +105 -55 to +110 °C
T
J
Junction Temperature -55 to +125 °C
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
JC
Junction-to-Case Thermal Resistance 210 °C/W
P
TOT
Total Device Power Dissipation 200 mW
EMITTER
I
F
Continuous Forward Current ±50 50 mA
V
R
Reverse Voltage 6 V
P
D
Power Dissipation 70 mW
Derate Above 100°C 1.7 mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 70 V
V
ECO
Emitter-Collector Voltage 6 V
I
C
Continuous Collector Current 50 mA
P
C
Collector Power Dissipation 150 mW
Derate Above 90°C 2.9 mW/°C
www.onsemi.com
3