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FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers

Publication Order Number:

FOD814/D

November-2017, Rev. 4

FOD814 Series, FOD817 Series

4-Pin DIP Phototransistor Optocouplers

Features

• AC Input Response (FOD814)

• Current Transfer Ratio in Selected Groups:

• Minimum BV

CEO

of 70 V Guaranteed

• Safety and Regulatory Approvals

– UL1577, 5,000 VAC

RMS

for 1 Minute

– DIN EN/IEC60747-5-5

Applications

FOD814 Series

• AC Line Monitor

• Unknown Polarity DC Sensor

• Telephone Line Interface

FOD817 Series

• Power Supply Regulators

• Digital Logic Inputs

• Microprocessor Inputs

Description

The FOD814 consists of two gallium arsenide infrared

emitting diodes, connected in inverse parallel, driv

ing a

silicon phototransistor output in a 4-pin dual in-line

package. The FOD817 Series consists of a gallium

arsenide infrared emitting diode driving a silicon

phototransistor in a 4-pin dual in-line package.

Functional Block Diagram

FOD814: 20–300% FOD817: 50–600%

FOD814A: 50–150% FOD817A: 80–160%

FOD817B: 130–260%

FOD817C: 200–400%

FOD817D: 300–600%

1ANODE, CATHODE

3CATHODE, ANODE

COLLECTOR

EMITTER

3 EMITTER

COLLECTORANODE

CATHODE

FOD814 FOD817

Figure 1. Schematic

Figure 2. Package Outlines

Summary of content (12 pages)

PAGE 1
Features Description • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
PAGE 2
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I–IV I–III < 300 VRMS Climatic Classification 30/110/21 Pollution Degree (DIN VDE 0110/1.
PAGE 3
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C Unless otherwise specified.
PAGE 4
Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit EMITTER VF Forward Voltage IR Reverse Current Ct Terminal Capacitance FOD814 IF = ±20 mA 1.2 1.4 FOD817 IF = 20 mA 1.2 1.4 FOD817 VR = 4.0 V FOD814 V = 0, f = 1 kHz 50 250 FOD817 V = 0, f = 1 kHz 30 250 FOD814 VCE = 20 V, IF = 0 100 FOD817 VCE = 20 V, IF = 0 100 10 V µA pF DETECTOR ICEO Collector Dark Current BVCEO Collector-Emitter Breakdown Voltage FOD814 IC = 0.
PAGE 5
Isolation Characteristics Symbol Parameter Device Test Conditions Min. VISO Input-Output Isolation Voltage(4) FOD814, FOD817 f = 60 Hz, t = 1 minute, II-O  2 µA 5000 RISO Isolation Resistance FOD814, FOD817 VI-O = 500 VDC CISO Isolation Capacitance FOD814, FOD817 VI-O = 0, f = 1 MHz Note: 4. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. www.onsemi.com 5 Typ. Max. Unit VACRMS  5x1010 1x1011 0.6 1.
PAGE 6
200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR POWER DISSIPATION PC (mW) TA = 25°C unless otherwise specified. 200 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) Fig. 3 Collector Power Dissipation vs. Ambient Temperature (FOD814) Fig. 4 Collector Power Dissipation vs. Ambient Temperature (FOD817) Ic = 0.5mA 1mA 3mA 5mA 5 4 Ta = 25°C 7mA 3 2 1 0 0 2.5 5.0 7.5 10.0 12.
PAGE 7
TA = 25°C unless otherwise specified. 30 50 I F = 30mA 40 20 m A 30 Pc (M AX.) 10mA 20 I IF = 30mA COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta= 25°C 5mA 10 Pc(MAX.) 20 15 10mA 10 5m A 5 1m A 0 0 0 0 10 20 30 40 50 60 70 80 90 100 Fig. 10 Collector Current vs. Collector-Emitter Voltage (FOD817) Fig. 9 Collector Current vs.
PAGE 8
TA = 25°C unless otherwise specified. RESPONSE TIME (μs) 50 20 VCE = 2V Ic= 2mA Ta = 25°C tr VOLTAGE GAIN AV (dB) 100 tf 10 5 td 2 ts 1 0.5 VCE = 2V Ic = 2mA Ta = 25°C 0 RL=10k 1k 100 -10 0.2 -20 0.2 0.1 0.1 0.2 0.5 1 2 5 LOAD RESISTANCE RL (kΩ) 10 1000 Fig. 16 Frequency Response Fig. 15 Response Time vs. Load Resistance COLLECTOR DARK CURRENT ICEO (nA) 10 100 0.5 15 2 FREQUENCY f (kHz) 10000 VCE = 20V 1000 100 10 1 0.1 0.
PAGE 9
Temperature (°C) Max. Ramp-up Rate = 3°C/S TP Max. Ramp-down Rate = 6°C/S 260 240 TL 220 Tsmax 200 180 Preheat Area 160 Tsmin 140 120 100 80 60 40 20 0 120 tP tL ts 240 360 Time 25°C to Peak Time (seconds) Proﬁle Feature Pb-Free Assembly Proﬁle Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second max.
PAGE 10
Part Number Package Packing Method FOD817X DIP 4-Pin Tube (100 units per tube) FOD817XS SMT 4-Pin (Lead Bend) Tube (100 units per tube) FOD817XSD SMT 4-Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD817X300 DIP 4-Pin, DIN EN/IEC60747-5-5 option Tube (100 units per tube) FOD817X3S SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tube (100 units per tube) FOD817X3SD SMT 4-Pin (Lead Bend), DIN EN/IEC60747-5-5 option Tape and Reel (1,000 units per reel) FOD817X300W DIP 4-Pin, 0.
PAGE 11
P2 Ø1.55±0.05 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 Figure 22. Carrier Tape Specification Symbol Description Dimensions in mm (inches) W Tape wide 16 ± 0.3 (0.63) P0 Pitch of sprocket holes F P2 Distance of compartment 7.5 ± 0.1 (0.295) 2 ± 0.1 (0.079) P1 Distance of compartment to compartment 12 ± 0.1 (0.472) A0 Compartment 4 ± 0.1 (0.15) 10.45 ± 0.1 (0.411) B0 5.30 ± 0.1 (0.209) K0 4.25 ± 0.1 (0.167) www.onsemi.
PAGE 12
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