Data Sheet

FOD814 Series, FOD817 Series — 4-Pin DIP Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
Notes:
2. Current Transfer Ratio (CTR) = I
C
/ I
F
x 100%.
3. For test circuit setup and waveforms, refer to page 7.
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Forward Voltage
FOD814 I
F
= ±20 mA 1.2 1.4
V
FOD817 I
F
= 20 mA 1.2 1.4
I
R
Reverse Current FOD817 V
R
= 4.0 V 10 µA
C
t
Terminal Capacitance
FOD814 V = 0, f = 1 kHz 50 250
pF
FOD817 V = 0, f = 1 kHz 30 250
DETECTOR
I
CEO
Collector Dark Current
FOD814 V
CE
= 20 V, I
F
= 0 100
nA
FOD817 V
CE
= 20 V, I
F
= 0 100
BV
CEO
Collector-Emitter Breakdown
Voltage
FOD814 I
C
= 0.1 mA, I
F
= 0 70
V
FOD817 I
C
= 0.1 mA, I
F
= 0 70
BV
ECO
Emitter-Collector Breakdown
Voltage
FOD814 I
E
= 10 µA, I
F
= 0 6
V
FOD817 I
E
= 10 µA, I
F
= 0 6
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
CTR Current Transfer Ratio
(2)
FOD814
I
F
= ±1 mA, V
CE
= 5 V
20 300
%
FOD814A 50 150
FOD817
I
F
= 5 mA, V
CE
= 5 V
50 600
FOD817A 80 160
FOD817B 130 260
FOD817C 200 400
FOD817D 300 600
V
CE(SAT)
Collector-Emitter Saturation
Voltage
FOD814 I
F
= ±20 mA, I
C
= 1 mA 0.1 0.2
V
FOD817 I
F
= 20 mA, I
C
= 1 mA 0.1 0.2
Symbol Parameter Device Test Conditions Min. Typ. Max. Unit
f
C
Cut-Off Frequency FOD814
V
CE
= 5 V, I
C
= 2 mA,
R
L
= 100 , -3 dB
15 80 kHz
t
r
Response Time (Rise)
FOD814,
FOD817
V
CE
= 2 V, I
C
= 2 mA,
R
L
= 100 
(3)
418µs
t
f
Response Time (Fall)
FOD814,
FOD817
318µs
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