Data Sheet

FMMT549 — PNP Low-Saturation Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Collector-Emitter Voltage vs.
Collector Current
Figure 2. Current Gain vs. Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 5. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 6. Input / Output Capacitance vs.
Reverse Bias Voltage
012345
0
100
200
300
400
500
600
700
800
4mA
3.5mA
3mA
2.5mA
1mA
Ib=0.5mA
2mA
1.5mA
Collector Current, Ic [mA]
Collector-Emitter Voltage, Vce[V]
0.0001 0.001 0.01 0.1 1 10
0
100
200
300
400
500
600
I - COLLECTOR CURRENT (A)
H - CURRENT GAIN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
25 °C
- 40 ° C
125 °C
V = 2.0V
ce
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I - COLLECTOR CURRENT (A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 °C
- 40 ° C
125 °C
β = 10
0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CES AT
- 40°C
25°C
125°C
β = 10
0.1 0.5 1 10 20 50 100
0
20
40
60
80
100
120
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pf)
CE
V = 2.0V
ce
C
ibo
C
obo
f = 1.0MHz