Data Sheet

FMMT549 — PNP Low-Saturation Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. 1.1.0 2
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. Device is mounted on FR-4 PCB 4.5 inch X 5 inch, mounting pad 0.02 in
2
of 2 oz copper.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Symbol Parameter Max. Unit
P
D
Total Device Dissipation, by R
θJA
500 mW
Derate Above 25°C
4mW/°C
R
θJA
Thermal Resistance, Junction-to-Ambient 250 °C/W
Symbol Parameter Conditions Min. Max. Unit
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0 -30 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100 μA, I
E
= 0 -35 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100 μA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-Off Current
V
CB
= -30 V, I
E
= 0 -100 nA
V
CB
= -30 V, I
E
= 0,
T
A
= 100°C
-10 μA
I
EBO
Emitter Cut-Off Current V
EB
= -4.0 V, I
C
= 0 -100 nA
h
FE
DC Current Gain
(4)
V
CE
= -2.0 V, I
C
= -50 mA 70
V
CE
= -2.0 V, I
C
= -500 mA 100 300
V
CE
= -2.0 V, I
C
= -1 A 80
V
CE
= -2.0 V, I
C
= -2 A 40
V
CE
(sat)
Collector-Emitter Saturation
Voltage
(4)
I
C
= -1 A, I
B
= -100 mA -500
mV
I
C
= -2 A, I
B
= -200 mA -750
V
BE
(sat) Base-Emitter Saturation Voltage
(4)
I
C
= -1 A, I
B
= -100 mA -1.25 V
V
BE
(on) Base-Emitter On Voltage
(4)
I
C
= -1 A, V
CE
= -2.0 V -1.0 V
f
T
Current Gain Bandwidth Product
I
C
= -100 mA, V
CE
= -5 V,
f = 100 MHz
100 MHz
C
obo
Output Capacitance
V
CB
= -10 V, I
E
= 0,
f = 1 MHz
25 pF