Data Sheet

FMMT549 — PNP Low-Saturation Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FMMT549 Rev. 1.1.0
October 2014
FMMT549
PNP Low-Saturation Transistor
Features
• This device is designed with high-current gain and low-saturation
voltage with collector currents up to 2 A continuous.
• Sourced from process PB.
Ordering Information
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Part Number Marking Package Packing Method
FMMT549 549 SSOT 3L Tape and Reel
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -35 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current
Continuous -1
A
Peak Pulse Current -2
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature Range -55 to +150 °C
1. Base 2. Emitter 3. Collector
SuperSOT-23
Marking : 549
1
2
3