Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 N-channel 350 m

Features

Absolute Maximum Ratings T

= 25

C unless other wise noted

Symbol Parameter FDV301N Units

DSS

, V

Drain-Source Voltage, Power Supply Voltage 25 V

GSS

, V

Gate-Source Voltage, V

8 V

, I

Drain/Output Current - Continuous 0.22 A

0.5

Maximum Power Dissipation 0.35 W

STG

Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0 kV

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient 357 °C/W

25 V, 0.22 A continuous, 0.5 A Peak.

DS(ON)

= 5 Ω @ V

= 2.7 V

DS(ON)

= 4 Ω @ V

= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.06V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors with one DMOS

FET.

FDV301N

Digital FET ,

N-Channel

General Description

This N-Channel logic level enhancement mode field effect

transistor is produced using ON Semiconductor's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize on-

state resistance. This device has been designed

especially for low voltage applications as a

replacement for digital transistors. Since bias resistors are

not required, this one N-channel FET can replace several

different digital transistors, with different bias resistor values.

Mark:301

SOT-23

SuperSOT

-8

SOIC-16

SO-8

SOT-223

SuperSOT

-6

GND

Vcc

INVERTER APPLICATION

OUT

Publication Order Number:

FDV301N/D

October-2017, Rev. 6

Summary of content (5 pages)

PAGE 1
FDV301N Digital FET , N-Channel Features General Description This N-Channel logic level enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors.
PAGE 2
Inverter Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Max Units IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1 µA VI (off) Input Voltage VCC = 5 V, IO = 10 µA 0.5 V VI (on) RO (on) Min VO = 0.3 V, IO = 0.005 A Output to Ground Resistance Typ 1 VI = 2.7 V, IO = 0.
PAGE 3
Typical Electrical Characteristics 1 .4 0 .5 GS = 4.5V 4 .0 3 .5 3 .0 0 .4 R DS(on ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V 2 .7 2 .5 0 .3 0 .2 2 .0 0 .1 1 .5 VGS = 2 .0V 1 .2 2 .5 2 .7 1 3 .0 3 .5 4 .0 0 .8 4 .5 0 .6 0 0 0 .5 V DS 1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V) 2 .5 0 3 0 .4 0 .5 15 R DS(on) , ON-RESISTANCE (OHM) 1.8 R DS(ON) , NORMALIZED 0 .2 0 .3 I D , DRAIN CURRENT (A) Figure 2.
PAGE 4
Typical Electrical And Thermal Characteristics 30 VDS = 5V I D = 0.2A 20 10V 4 15V CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 C iss 10 C oss 5 3 2 1 f = 1 MHz V GS = 0V 1 0 .1 0 0 0.1 0.2 0.3 0.4 0.5 C rss 0 .5 1 2 5 V , DRAIN TO SOURCE VOLTAGE (V) DS 0.6 10 25 Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 1 5 ( DS ON )L IM 1m IT 10 0m s 1s 0 .1 10 0 .0 5 VGS = 2.7V 0 .
PAGE 5
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