Data Sheet
www.onsemi.com
4
Typical Characteristics
0
2
4
6
8
10
0 4 8 12 16 20
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
V
DS
= 10V
20V
15V
0
300
600
900
1200
1500
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
100µs
1
10
100
0.01 0.1 1 10 100 1000
t
AV
, TIME IN AVALANCHE (mS)
I
AS
, AVALANCHE CURRENT (A)
25
125
Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching
Capability
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
Figure 11. Single Pulse Maximum Power Dissipation.
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFET
