Data Sheet

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2
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 - - V
∆BV DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
- 30 -
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V - - 1
µA
I
GSS
Gate–Body Leakage
V
GS
= ±20 V, V
DS
= 0 V
- -
±100
nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.7 3 V
∆V GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
- –5 -
mV/°C
R
DS(ON)
Static Drain–Source
On–Resistance
V
GS
= 10 V, I
D
= 13 A
V
GS
= 4.5 V, I
D
= 12 A
V
GS
= 10 V, I
D
= 13 A, T
J
=125°C
-
7.4
9.4
11
9
12
15
mΩ
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 13 A - 58 - S
Dynamic Characteristics
C
iss
Input Capacitance - 1108 - pF
C
oss
Output Capacitance - 310 - pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
- 109 - pF
R
G
Gate Resistance V
GS
= 15 mV, f = 1.0 MHz 0.3 1 1.7
Ω
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time - 11 20 ns
t
r
Turn–On Rise Time - 5 10 ns
t
d(off)
Turn–Off Delay Time - 27 43 ns
t
f
Turn–Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
- 7 14 ns
Q
g
Total Gate Charge - 10 14 nC
Q
gs
Gate–Source Charge - 3 - nC
Q
gd
Gate–Drain Charge
V
DS
= 15 V, I
D
= 13 A,
V
GS
= 5 V
- 3 - nC
Drain–Source Diode Characteristics
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) - 0.74 1.2 V
t
rr
Diode Reverse Recovery Time I
F
= 13 A, dI
F
/dt = 100 A/µs - 27 - ns
Q
rr
Diode Reverse Recovery Charge - 13 - nC
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°C/W when mounted
on a 1in
2
pad of 2 oz
copper
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
AS
= 11A, V
DD
= 30V, V
GS
= 10V
FDS6298
30V N
-
Channel Fast Switching PowerTrench
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MOSFET