Data Sheet

FDS4470 Rev D1 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
Drain-Source Avalanche Energy Single Pulse, V
DD
=40V, I
D
=12.5A 370 mJ
I
AS
Drain-Source Avalanche Current 12.5 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
40 V
ΔBVDSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C
42
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 32 V, V
GS
= 0 V 1
μA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 30 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –20 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2 3.9 5 V
ΔVGS(th)
ΔT
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, Referenced to 25°C
–8
mV/°C
R
DS(on)
Static Drain–Source On–Resistance
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 10 V, I
D
= 12.5 A,T
J
=125°C
6
9
9
14
mΩ
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 25 A
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 12.5 A 45 S
Dynamic Characteristics
C
iss
Input Capacitance 2659 pF
C
oss
Output Capacitance 605 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 20 V, V
GS
= 0 V,
f = 1.0 MHz
298 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 14 25 ns
t
r
Turn–On Rise Time 12 22 ns
t
d(off)
Turn–Off Delay Time 37 59 ns
t
f
Turn–Off Fall Time
V
DD
= 20 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
29 46 ns
Q
g
Total Gate Charge 45 63 nC
Q
gs
Gate–Source Charge 11.2 nC
Q
gd
Gate–Drain Charge
V
DS
= 20 V, I
D
= 12.5 A,
V
GS
= 10 V
11 nC
FDS4470