Data Sheet

FDP8860 N-Channel PowerTrench
®
MOSFET
FDP8860 Rev.B
www.fairchildsemi.com
3
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
80
160
240
320
V
GS
= 4.5V
V
GS
= 4VV
GS
= 4V
V
GS
= 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
GS
= 3.5V
V
GS
=3V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 80 160 240 320
0
1
2
3
4
V
GS
= 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 10V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150 175
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
I
D
= 80A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
0
2
4
6
8
10
I
D
= 50A
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
V
GS
, GATE TO SOURCE VOLTAGE (V)
O n -R es i st an c e v s Ga te t o
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
40
80
120
160
V
DD
= 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
T
J
= - 55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.30.60.91.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
300
S ou r ce t o D ra i n D i od e
Forward Voltage vs Source Current