Data Sheet

FDP8441 N-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com6
Figure 11.
-80 -40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
=
V
DS
I
D
=
250
µ
A
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
1.15
T
J
, JUNCTION TEMPERATURE
(
o
C
)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
I
D
= 250
µ
A
Figure 13.
0.1 1 10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
50
40000
Capacitance vs Drain to Source
Voltage
Figure 14.
0 50 100 150 200 250
0
2
4
6
8
10
I
D
= 80A
V
DD
= 20V
V
DD
= 15V
V
DD
= 25V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
,
GATE CHARGE(nC)
Gate Charge vs Gate to Source Voltage
Typical Characteristics
FDP8441 Rev. C0