Data Sheet

FDP8441 Rev. C0
FDP8441 N-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 40 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32V
V
GS
= 0V
- - 1
µA
T
J
= 150°C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
DS
= V
GS
, I
D
= 250µA 2 2.8 4 V
r
on)
Drain to Source On Resistance
I
D
= 80A, V
GS
= 10V - 2.1 2.7
mΩ
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
- 3.6 4.7
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 15000 - pF
C
oss
Output Capacitance - 1250 - pF
C
rss
Reverse Transfer Capacitance - 685 - pF
R
G
Gate Resistance V
GS
= 0.5V, f = 1MHz - 1.1 - Ω
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0 to 10V
V
DD
= 20V
I
D
= 35A
I
g
= 1mA
- 215 280 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 to 2V - 29 38 nC
Q
gs
Gate to Source Gate Charge - 60 - nC
Q
gs2
Gate Charge Threshold to Plateau - 32 - nC
Q
gd
Gate to Drain “Miller” Charge - 49 - nC
DS(
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (T
C
< 160
o
C, V
GS
= 10V) 80
AContinuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 62
o
C/W) 23
Pulsed See Figure 4
E
AS
Single Pulse Avalanche Energy (Note 1) 947 mJ
P
D
Power dissipation 300 W
Derate above 25
o
C2W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
R
θJC
Thermal Resistance Junction to Case 0.5
o
C/W
R
θJA
Thermal Resistance Junction to Ambient (Note 2) 62
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDP8441 FDP8441 TO-220AB Tube N/A 50 units