Data Sheet

FDP80N06 — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temp
erature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Tem
perature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 1mA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.5
1.0
1.5
2.0
2.5
*Notes:
1. V
GS
= 10V
2. I
D
= 40A
vs. Temperature
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
110
0.01
0.1
1
10
100
1000
30µs
100µs
1ms
10ms
I
D
, Drai
n Current [A]
V
DS
, Drain-So urce Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
80
DC
25 50 75 100 150 175
0
15
30
45
60
75
90
I
D
, Drain Current [A]
125
o
T
C
, Case Temperature [ C]
10
-5
10
-4
10
-3
10
2-
10
1-
10
0
10
1
1E-3
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θJC
(t) = 0.85
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
0.5
Single pulse
Z
θJC
, Thermal Response [
o
C/W]
Rectangular Pulse Duration [sec]
2
t
1
P
DM
t
2