Data Sheet

FDP80N06 — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor
Corporation FDP80N06 Rev. C0
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
V
SD
, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
0.1 1 10
1
10
100
0.02
0.4
*Notes:
1. 250
µs Pulse Test
2. T
C
= 25
o
C
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
I
D
,Drain Current[A]
V
DS
,Drain-Source Voltage[V]
400
20 400 10
1
10
100
-55
o
C
175
o
C
*Notes:
1. V
DS
= 20V
2. 250
µs Pulse Test
25
o
C
I
D
,Drain Current[A]
V
GS
,Gate-Source Voltage[V]
500
0.0 0.5 1.0 1.5 2.0
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
µs Pulse Test
175
o
C
I
S
, Reverse Drain Current [A]
25
o
C
500
0 80 160 240 320
0.00
0.01
0.02
0.03
*Note: T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
015304560
0
2
4
6
8
10
*Note: I
D
= 80A
V
DS
= 15V
V
DS
= 30V
V
DS
= 48V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
0.1 10
0
1500
3000
4500
6000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
1
V
DS
, Drain-Source Voltage [V]
30