Data Sheet

FDMS6681Z P-Channel PowerTrench
®
MOSFET
www.onsemi.com
3
Typical Characteristics T
J
= 25 °C unless otherwise noted.
Figure 1.
0123
0
15
30
45
60
75
90
V
GS
= -3 V
V
GS
= -3.5 V
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS
= -4 V
V
GS
= -10V
V
GS
= -4.5 V
On Region Characteristics
Figure 2.
0 153045607590
0
1
2
3
4
5
V
GS
= -4.5 V
V
GS
= -3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT (A)
V
GS
= -4 V
V
GS
= -3 V
V
GS
= -10 V
N o r m a l i z e d O n - R e s i s t a n ce
vs Drain Current and Gate Voltage
Fi g u r e 3 . No r m al i z ed O n R e s ist a nce
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -22.1 A
V
GS
= -10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
0
3
6
9
12
T
J
= 125
o
C
I
D
= -22.1 A
T
J
= 25
o
C
-V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n- Re si st an c e vs G at e t o
Source Voltage
Figure 5. Transfer Characteristics
01234
0
15
30
45
60
75
90
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
J
= 150
o
C
V
DS
= -5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
Figure 6.
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou rc e t o Dr ai n D io de
Forward Voltage vs Source Current