Data Sheet

FDMS6681Z P-Channel PowerTrench
®
MOSFET
©2009 Semiconductor Components Indus
tries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDMS6681Z/D
1
FDMS6681Z
P-Channel PowerTrench
®
MOSFET
-30 V, -122 A, 3.2 mΩ
Features
 Max r
DS(on)
= 3.2 mΩ at V
GS
= -10 V, I
D
= -21.1 A
 Max r
DS(on)
= 5.0 mΩ at V
GS
= -4.5 V, I
D
= -15.7 A
 Advanced Package and Silicon combination
for low r
DS(on)
 HBM ESD Protection Level of 8kV Typical(Note 3)
 MSL1 Robust Package Design
 RoHS Compliant
General Description
The FDMS6681Z has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
DS(on)
and
ESD protection.
Applications
 Load Switch in Notebook and Server
 Notebook Battery Pack Power Management
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted.
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous T
C
= 25 °C (Note5) -122
A
-Continuous
T
C
= 100 °C (Note5) -77
-
Continuous T
A
= 25 °C (Note 1a) -21.1
-Pulsed
(Note4) -600
P
D
Power Dissipation T
C
= 25 °C 73
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.7
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS6681Z FDMS6681Z Power 56 13 ’’ 12 mm 3000 units