Data Sheet

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
FDMF6705B • Rev. 1.0.3 4
FDMF6705B - Extra-Small, High-Performance, High-Frequency DrMOS Module
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Min. Max. Unit
V
CIN
Supply Voltage Referenced to CGND -0.3 6.0 V
V
DRV
Drive Voltage Referenced to CGND -0.3 6.0 V
V
DISB#
Output Disable Referenced to CGND -0.3 6.0 V
V
PWM
PWM Signal Input Referenced to CGND -0.3 6.0 V
V
SMOD#
Skip Mode Input Referenced to CGND -0.3 6.0 V
V
GL
Low Gate Manufacturing Test Pin Referenced to CGND -0.3 6.0 V
V
THWN#
Thermal Warning Flag Referenced to CGND -0.3 6.0 V
V
IN
Power Input Referenced to PGND, CGND -0.3 30.0 V
V
BOOT
Bootstrap Supply
Referenced to VSWH, PHASE -0.3 6.0 V
Referenced to CGND -0.3 30.0 V
V
GH
High Gate Manufacturing Test Pin
Referenced to VSWH, PHASE -0.3 6.0 V
Referenced to CGND -0.3 30.0 V
V
PHS
PHASE Referenced to CGND -0.3 30.0 V
V
SWH
Switch Node Input
Referenced to PGND, CGND (DC Only) -0.3 30.0 V
Referenced to PGND, <20 ns -8.0 33.0 V
V
BOOT
Bootstrap Supply
Referenced to VDRV 22.0 V
Referenced to VDRV, <20 ns 25.0 V
I
THWN#
THWN# Sink Current -0.1 7.0 mA
I
O(AV)
Output Current
(1)
f
SW
=300 kHz, V
IN
=19 V, V
O
=1.0 V 38
A
f
SW
=1 MHz, V
IN
=19 V, V
O
=1.0 V 35
θ
JPCB
Junction-to-PCB Thermal Resistance 3.5 °C/W
T
A
Ambient Temperature Range -40 +125 °C
T
J
Maximum Junction Temperature +150 °C
T
STG
Storage Temperature Range -55 +150 °C
ESD Electrostatic Discharge Protection
Human Body Model, JESD22-A114 2000
V
Charged Device Model, JESD22-C101 1000
Note:
1. I
O(AV)
is rated using Fairchild’s DrMOS evaluation board, T
A
= 25°C, natural convection cooling. This rating is limited
by the peak DrMOS temperature, T
J
= 150°C, and varies depending on operating conditions and PCB layout. This
rating can be changed with different application settings.
Recommended Operating Conditions
The Recommended Operating
C
onditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol Parameter Min. Typ. Max. Unit
V
CIN
Control Circuit Supply Voltage 4.5 5.0 5.5 V
V
DRV
Gate Drive Circuit Supply Voltage 4.5 5.0 5.5 V
V
IN
Output Stage Supply Voltage 3.0 12.0 24.0
(2)
V
Note:
2. Operating at high V
IN
can create excessive AC overshoots on the VSWH-to-GND and BOOT-to-GND nodes
during MOSFET switching transients. For reliable DrMOS operation, VSWH-to-GND and BOOT-to-GND must
remain at or below the Absolute Maximum Ratings shown in the table above. Refer to the “Application
Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.