Data Sheet

FDMC5614P P-Channel PowerTrench
®
MOSFET
www.onsemi.com
4
Figure 7.
048
1216
0
2
4
6
8
10
I
D
= -5
.7A
V
DD
= -
30V
V
DD
= -2
0V
-V
GS
, GA
TE TO SOURCE VOLTAGE(V)
Q
g
, GA
TE CHARGE(nC)
V
DD
= -4
0V
Gate Charg
e Characteristics Figure 8.
0.1 1 10
10
100
100
0
60
f = 1
MHz
V
GS
= 0V
C
rss
C
oss
C
iss
CA
PACITANCE (pF)
-V
DS
, DR
AIN TO SOURCE VOLTAGE (V)
2000
C a
p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01
0.1 1 10 100
1
2
3
4
5
6
7
8
T
J
= 25
o
C
T
J
= 12
5
o
C
t
AV
, T
IME IN AVALANCHE(ms)
-I
AS
, AV
ALANCHE CURRENT(A)
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
0.1 1 10 100
1E
-3
0.01
0.1
1
10
100us
60
DC
10s
1s
100m
s
10m
s
1ms
SI
NGLE PULSE
T
J
= MAX RA
TED
R
θJA
= 135
o
C/W
T
A
= 25
o
C
r
DS(
on)
LIM
ITED
-I
D
, DRAIN CU
RRENT (A)
-V
DS
, DR
AIN-SOURCE VOLTAGE (V)
200
F o r w a r d B i a s S a f e
Operating Area
Figure 11.
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
10
00
SING
LE PULSE
R
θJA
= 13
5
o
C/W
0.5
V
GS
= -1
0V
P(
PK
),
PEAK TRANSIENT POWER (W)
t,
PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
FOR T
EMPERATURES
ABOVE 25
o
C DE
RATE PEAK
CURRENT
AS FOLLOWS:
150 T
A
–
12
5
------------------------
Single Pulse Maximum Power Dissipation
Typical Characteristics T
J
= 25°C unless otherw
ise noted