Data Sheet

FDMC5614P P-Channel PowerTrench
®
MOSFET
www.onsemi.com
3
Typical Characteristics T
J
= 25°C unless otherwise noted
Figure 1.
01
2345
0
5
10
15
20
25
V
GS
=
-4.5V
V
GS
= -3
.0V
V
GS
= -
10V
V
GS
= -3
.5V
PU
LSE DURATION = 300
μs
DU
TY CYCLE = 2.0%MAX
V
GS
= -5
V
-I
D
,
DRAIN CURRENT (A)
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
On-Reg
ion Characteristics Figure 2.
0
5 10 15 20 25
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
=
-3.5V
V
GS
=
-3.0V
V
GS
=
-4.5V
V
GS
= -
5V
PU
LSE DURATION = 300
μs
DU
TY CYCLE = 2.0%MAX
NORM
ALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
,
DRAIN CURRENT(A)
V
GS
= -
10V
N
o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
-50
-25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
D
=
-5.7A
V
GS
= -
10V
NORMALIZED
DR
AIN TO SOURCE ON-RESISTANCE
T
J
,
JUNCTION TEMPERATURE
(
o
C)
vs
Junction Temperature
Figure 4.
2
345678910
50
100
150
200
250
300
350
P
ULSE DURATION =300
μs
DU
TY CYCLE = 2.0%MAX
T
J
= 1
25
o
C
T
J
= 25
o
C
I
D
= -
5.7A
r
DS(o
n)
, DR
AIN TO
SOURCE ON-RESISTANCE
(mO
HM
)
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
O n -R es i st an ce v s G a te to
Source Voltage
Figure 5. Transfer Characteristics
01
23456
0
5
10
15
20
25
30
V
DD
= -
5V
T
J
=-
55
o
C
T
J
= 2
5
o
C
T
J
= 1
25
o
C
P
ULSE DURATION = 300
μs
DU
TY CYCLE = 2.0%MAX
-I
D
,
DRAIN CURRENT (A)
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.2
0.4 0.6 0.8 1.0 1.2 1.4
1E-4
1E-3
0.01
0.1
1
10
30
T
J
=
-55
o
C
T
J
=
25
o
C
T
J
= 125
o
C
V
GS
= 0
V
-I
S
,
REVERSE DRAIN CURRENT (A)
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current