Data Sheet
FDMC5614P P-Channel PowerTrench
®
MOSFET
www.onsemi.com
2
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= -250μA, V
GS
= 0V -60 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250μA, referenced to 25°C -54 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -48V, V
GS
= 0V -1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= -250μA -1 -1.95 -3 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= -250μA, referenced to 25°C 4.7 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -10V, I
D
= -5.7A 84 100
mΩV
GS
= -4.5V, I
D
= -4.4A 108 135
V
GS
= -10V, I
D
= -5.7A , T
J
= 125°C 140 168
g
FS
Forward Transconductance V
DS
= -15V, I
D
= -5.7A 11 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
795 1055 pF
C
oss
Output Capacitance 140 185 pF
C
rss
Reverse Transfer Capacitance 60 90 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= -30V, I
D
= -1A
V
GS
= -10V, R
GEN
= 6Ω
10 21 ns
t
r
Rise Time 11 23 ns
t
d(off)
Turn-Off Delay Time 32 65 ns
t
f
Fall Time 11 22 ns
Q
g(TOT)
Total Gate Charge at 10V V
GS
= -10V
V
DD
= -30V
I
D
= -5.7A
15 20 nC
Q
gs
Gate to Source Gate Charge 1.6 2.1 nC
Q
gd
Gate to Drain “Miller” Charge 2.7 3.5 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= -3.2A -0.8 -1.2 V
t
rr
Reverse Recovery Time
I
F
= -3.2A, di/dt = 100A/μs
36 ns
Q
rr
Reverse Recovery Charge 29 nC
Notes:
1: R
θJA
is
determined with the device mounted on a 1 in
2
oz copp
er pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is
guaranteed by design while R
θJA
is
determined by the
user's board design.
(a)R
θJA
= 60
°C/W when mounted on a 1 in
2
pad o
f 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)R
θJA
= 13
5°C/W when mounted on a minimum pad of 2 oz copper.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
a. 60°C/W when mounted on
a 1 in
2
pad of 2 o z cop per
b.135°C/W when mounted on a
minimum pad of 2 oz copper