Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsFETsMOSFET 1 P-channel 2.1

FDMC5614P P-Channel PowerTrench

MOSFET

, LLC.

October-2017, Rev.3

Public

ation Order Number:

FDMC5614P/D

FDMC5614P

P-Channel PowerTrench

MOSFET

-60V, -13.5A, 100mΩ

Features

 Max r

DS(on)

= 10

0mΩ at V

= -1

, I

= -5.7A

 Max r

DS(on)

= 135mΩ at V

= -4.5V, I

= -4.4A

 Low gate charge

 Fast switching speed

 High performance trench technology for extr

emely low r

DS(on)

 High power and current handling capability

 RoHS Compliant

General Description

This P-Channel MOSFET is a rugged gate version of ON

Semiconductor's advanced PowerTrench

process. It has been

optimized for power management applications requiring a wide

range of gate drive voltage ratings (4.5V-20V).

Application

 Power management

 Load switch

 Battery protection

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Ther

mal Characteristics

Package Marking and Ordering Information

Symb

ol Parameter Ratings Units

Drain to Sour

ce Voltage -60 V

te to Source Voltage ±20 V

Drain Cur

rent -Continuous (Package limited) T

= 25°C -

13.5

-C

ontinuous (Silicon limited) T

= 25

°C -14

-Continuous

= 25

°C (Note 1a) -5.7

-Pulsed -

Power D

issipation T

= 25°

C 42

Power Dissipation T

= 25°

C (Note 1a) 2.1

, T

STG

erating and Storage Junction Temperature Range -55 to +150 °C

θJC

Ther

mal Resistance, Junction to Case 3.0

°C/W

θJA

hermal Resistance, Junction to Ambient (Note 1a) 60

Device Marking Device Package Reel Size Tape Width Quantity

5614P FDMC5614P Power 33 7’’ 8mm 3000 units

Pin 1

MLP 3.3x3.3

Bottom

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Summary of content (6 pages)

PAGE 1
-60V, -13.5A, 100mΩ Features General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor's advanced PowerTrench® process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient IGSS Gate to Source Leakage Current IDSS Zero Gate Voltage Drain Current ID = -250μA, VGS = 0V -60 ID = -250μA, referenced to 25°C V -54 VDS = -48V, VGS = 0V VGS = ±20V, VDS = 0V mV/°C -1 μA ±100 nA -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperat
PAGE 3
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 25 VGS = -10V VGS = -5V 20 VGS = -4.5V 15 VGS = -3.5V 10 VGS = -3.0V 5 0 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 1 5 2.0 1.6 VGS = -10V 1.0 0.8 5 10 15 -ID, DRAIN CURRENT(A) 0 350 ID = -5.7A VGS = -10V 1.6 1.4 1.2 1.0 0.8 0.6 0.
PAGE 4
ID = -5.7A 1000 8 VDD = -20V 6 VDD = -30V 4 VDD = -40V 2 0 0 4 8 12 Qg, GATE CHARGE(nC) Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 2000 10 100 Crss 10 0.1 16 f = 1MHz VGS = 0V 8 7 6 5 60 4 TJ = 25oC 2 10 100us 1ms 10ms 100ms 0.1 0.01 TJ = 125oC rDS(on) LIMITED 1 1s 10s DC SINGLE PULSE TJ = MAX RATED o RθJA = 135 C/W TA = 25oC 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 1E-3 0.1 100 1 10 100 200 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9.
PAGE 5
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZθJA (t) = r(t) x RθJA SINGLE PULSE RθJA = 135 °C/W Peak TJ = PDM x ZθJA (t) + TA Duty Cycle, D = t1 / t2 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 0 10 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Transient Thermal Response Curve www.onsemi.
PAGE 6
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