Data Sheet

FDLL3595 — High Conductance, Low Leakage Diode
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.1.0 2
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Units
V
R
Breakdown Voltage I
R
= 100 μA150 V
V
F
Forward Voltage
I
F
= 1.0 mA 520 680 mV
I
F
= 5.0 mA 600 750 mV
I
F
= 10 mA 650 800 mV
I
F
= 50 mA 750 880 mV
I
F
= 100 mA 790 920 mV
I
F
= 200 mA 0.83 1.0 V
I
R
Reverse Leakage
V
R
= 125 V 1.0 nA
V
R
= 30 V, T
A
= 125°C300nA
V
R
= 125 V, T
A
= 125°C500nA
V
R
= 180 V, T
A
= 150°C3.0μA
C
T
Total Capacitance V
R
= 0, f = 1.0 MHz 8.0 pF
t
rr
Reverse Recovery Time
I
F
= 10 mA, V
R
= 3.5 V
R
L
= 1.0 KΩ
3.0 μs