Data Sheet

FDLL3595 — High Conductance, Low Leakage Diode
© 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com
FDLL3595 Rev. 1.1.0 1
April 2013
FDLL3595
High Conductance, Low Leakage Diode
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
W
IV
Working Inverse Voltage 125 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current 500 mA
i
f
Recurrent Peak Forward Current 600 mA
I
FSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 μs4.0A
T
STG
Storage Temperature Range -65 to +200 °C
T
J
Operating Junction Temperature -65 to +200 °C
Symbol Parameter Value Units
P
D
Power Dissipation 500 mW
Linear Derating Factor from T
A
= 25°C3.33mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 350 °C/W
Cathode Band
SOD80
Description
A general purpose diode that couples high forward con-
ductance fast swiching speed and high blocking voltages
in a glass leadless LL-34 surface mount package. Place-
ment of the expansion gap has no relationship to the
location of the cathode terminal which is indicated by the
first color band.