Data Sheet

www.onsemi.com
5
FDD8880
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-40 0 40 80 120 160 200-80
V
GS
= V
DS
, I
D
= 250µA
NO
RMALIZED GATE
T
J
, J
UNCTION TEMPERATURE (
o
C)
T
HRESHOLD VOLTAGE
0.90
0.95
1.00
1.05
1.10
-
80 -40 0 40 80 120 160 200
T
J
,
JUNCTION TEMPERATURE (
o
C)
NORM
ALIZED DRAIN TO SOURCE
I
D
=
250µA
B
REAKDOWN VOLTAGE
100
1000
0.1 1 10
2000
30
C, CAP
ACITANCE (pF)
V
DS
, DRAIN T
O SOURCE VOLTAGE (V)
V
GS
= 0
V, f = 1MHz
C
IS
S
= C
GS
+ C
GD
C
OS
S
≅ C
DS
+ C
GD
C
RSS
= C
GD
0
2
4
6
8
10
0 5 10
15 20 25
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Q
g
, GA
TE CHARGE (nC)
V
DD
=
15V
I
D
= 3
5A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER: