Data Sheet

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4
FDD8880
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to ON Semiconductor Application Notes AN7514 and
AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25°C unless otherwise noted
0.1
1
10
100
1000
110
60
V
DS
, DRAIN TO
SOURCE VOLTAGE (V)
I
D
, D
RAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
SIN
GLE PULSE
LIMITED BY r
DS(O
N)
AREA M
AY BE
OPERATION IN THIS
10µs
1ms
DC
100µs
10m
s
1
10
100
0.01 0
.1 1
500
10
I
AS
, AV
ALANCHE CURRENT (A)
t
AV
, TI
ME IN AVALANCHE (ms)
STAR
TING T
J
= 25
o
C
ST
ARTING T
J
= 15
0
o
C
t
AV
= (L
)(I
AS
)/(1.3
*RATED BV
DSS
- V
DD
)
If R =
0
If R ≠ 0
t
AV
= (L
/R)ln[(I
AS
*R)/
(1.3*RATED BV
DSS
- V
DD
) +1
]
0
20
40
60
80
1.5
2.0 2.5 3.0 3.5 4.0
I
D
, DRAIN CURRENT
(A)
V
GS
, GA
TE TO SOURCE VOLTAGE (V)
PUL
SE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -5
5
o
C
T
J
= 25
o
C
0
20
40
60
80
0 0.25 0
.5 0.75 1.0
I
D
, DRA
IN CURRENT (A)
V
DS
, DRA
IN TO SOURCE VOLTAGE (V)
PUL
SE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4
V
V
GS
= 3V
V
GS
= 5V
5
10
15
20
25
246810
I
D
= 1A
V
GS
, GA
TE TO SOURCE VOLTAGE (V)
I
D
=
35A
r
DS(O
N)
, DRAIN TO
SOURCE
ON RESISTANCE (mΩ)
PUL
SE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.6
0.
8
1.0
1.2
1.4
1.6
1.8
-80 -40 0 40 80 120 160 200
NO
RMALIZED DRAIN TO SOURCE
T
J
, JUNCT
ION TEMPERATURE (
o
C)
ON RESIST
ANCE
V
GS
= 10V
, I
D
= 3
5A
PULS
E DURATION = 80µs
DUTY CYCLE = 0.5% MAX