Data Sheet

FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
FDD8782/FDU8782 Rev. 1.2 www.fairchildsemi.com4
Figure 7.
0 5 10 15 20 25
0
2
4
6
8
10
V
DD
= 13V
V
DD
= 18V
V
DD
= 8V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
3000
30
Capacitance vs Drain to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
AS
, AVALANCHE CURRENT
(
A
)
50
Unclamped Inductive Switching
Capability
Figure 10.
25 50 75 100 125 150 175
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE
(
o
C
)
R
θ
JC
= 3.0
o
C/W
V
GS
= 4.5V
V
GS
= 10V
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
110
0.1
1
10
100
10us
500
1ms
10ms
100us
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
DC
50
LIMITED BY
PACKAGE
Forward Bias Safe Operating Area Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
SINGLE PULSE
V
GS
= 10V
P
(
PK
)
, PEAK TRANSIENT POWER (W)
t
,
PULSE WIDTH (s)
7000
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 T
C
–
150
-----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted