Data Sheet

FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
FDD8782/FDU8782 Rev. 1.2 www.fairchildsemi.com3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1. On Region Characteristics
01234
0
10
20
30
40
50
60
70
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4.5V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
0 10203040506070
0
1
2
3
4
5
6
7
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3V
On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 35A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized On Resistance vs Junction
Temperature
Figure 4.
246810
0
10
20
30
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 15A
r
DS(on)
, ON-RESISTANCE
(
m
Ω
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
10
20
30
40
50
60
70
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.00.20.40.60.81.01.21.4
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current