Data Sheet

FDD8782/FDU8782 N-Channel PowerTrench
®
MOSFET
FDD8782/FDU8782 Rev. 1.2 www.fairchildsemi.com2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250μA, V
GS
= 0V 25 V
ΔB
VDSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250μA, referenced to
25
°C
14.3 mV/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20V,
V
GS
= 0V
1
μA
T
J
= 150°C 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250μA 1.2 1.7 2.5 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250μA, referenced to
25°C
-6.5 mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 35A 8.5 11.0
mΩ
V
GS
= 4.5V, I
D
= 35A 11.0 14.0
V
GS
= 10V, I
D
= 35A
T
J
= 175°C
12.1 18.0
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
920 1220 pF
C
oss
Output Capacitance 230 310 pF
C
rss
Reverse Transfer Capacitance 160 240 pF
R
g
Gate Resistance f = 1MHz 1.4 Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 9Ω
7 14 ns
t
r
Rise Time 9 18 ns
t
d(off)
Turn-Off Delay Time 22 36 ns
t
f
Fall Time 14 25 ns
Q
g
Total Gate Charge V
GS
= 0V to 10V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
18 25 nC
Q
g
Total Gate Charge V
GS
= 0V to 5V 9.4 13 nC
Q
gs
Gate to Source Gate Charge 3.1 nC
Q
gd
Gate to Drain “Miller”Charge 4.0 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 35A 0.96 1.25
V
V
GS
= 0V, I
S
= 15A 0.86 1.2
t
rr
Reverse Recovery Time I
F
= 35A, di/dt = 100A/μs 25 38 ns
Q
rr
Reverse Recovery Charge I
F
= 35A, di/dt = 100A/μs 17 26 nC
Notes:
1: Pulse time < 300us,Duty cycle = 2%.
2: Starting T
J
= 25
o
C, L = 1.0mH, I
AS
= 12A ,V
DD
= 23V, V
GS
= 10V.