Data Sheet

FDD8451 N-Channel PowerTrench
®
MOSFET
FDD8451 Rev. 1.2 www.fairchildsemi.com4
Figure 7.
0481216
0
2
4
6
8
10
V
DD
= 25V
V
DD
= 15V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics Figure 8.
0.1 1 10
10
100
1000
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
40
3000
Capacitance vs Drain to Source Voltage
Figure 9.
1E-3 0.01 0.1 1 10 100
1
10
100
T
J
= 25
o
C
I
AS
, AVALANCHE CURRENT(A)
t
AV
, TIME IN AVALANCHE(ms)
T
J
= 125
o
C
T
J
= 150
o
C
Unclamped Inductive Switching
Capability
Figure 10.
40 60 80 100 120 140 160
0
5
10
15
20
25
30
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE
(
o
C
)
175
R
T
JC
= 4.1
o
C/W
V
GS
=4.5V
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
110
0.1
1
10
100
100us
DC
100ms
10ms
1ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
O
C
80
LIMITED BY
PACKAGE
Forward Bias Safe Operating Area Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
10000
V
GS
= 10V
SINGLE PULSE
P
(
PK
)
, PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 T
C
–
150
----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted