Data Sheet

FDD8451 N-Channel PowerTrench
®
MOSFET
FDD8451 Rev. 1.2 www.fairchildsemi.com2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250PA, V
GS
= 0V 40 V
'BV
DSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250PA, referenced to
25
°C
33.5 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 32V, V
GS
= 0V 1 PA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250PA 1 2.1 3 V
'V
GS(th)
'T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250PA, referenced to
25
°C
-5.7 mV/°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 9A 19 24
m:
V
GS
= 4.5V, I
D
= 7A 23 30
V
GS
= 10V, I
D
= 9A
T
J
= 150°C
32 41
g
FS
Forward Transcondductance V
DS
= 5V, I
D
= 9A 29 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
780 990 pF
C
oss
Output Capacitance 112 150 pF
C
rss
Reverse Transfer Capacitance 72 110 pF
R
g
Gate Resistance f = 1MHz 1.1 :
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 20V, I
D
= A
V
GS
= 10V, R
GEN
= 6:
714ns
t
r
Rise Time 310ns
t
d(off)
Turn-Off Delay Time 19 34 ns
t
f
Fall Time 210ns
Q
g
Total Gate Charge at 10V
V
DS
= 20V, I
D
= 9A
V
GS
= 10V
16 20 nC
Q
g
Total Gate Charge at 5V 8.6 11 nC
Q
gs
Gate to Source Gate Charge 2.5 nC
Q
gd
Gate to Drain “Miller”Charge 3.7 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= 9A 0.87 1.2 V
t
rr
Reverse Recovery Time I
F
= 9A, di/dt = 100A/Ps2538ns
Q
rr
Reverse Recovery Charge I
F
= 9A, di/dt = 100A/Ps1929nC
40 °C/W when mounted on a
1 in
2
pad of 2 oz copper
96 °C/W when mounted on
a minimum pad
a)
b)
Notes:
1: R
TJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
TJC
is guaranteed by design while R
TJA
is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: Starting T
J
=25
°
C, L= 0.1mH, I
AS
= 20 A, V
DD
=36 V, V
GS
= 10 V.