Data Sheet

Typical Characteristics (Q2 P-Channel)T
J
= 25°C unless otherwise noted
Figure 20. Gate Charge Characteristics
048121620
0
2
4
6
8
10
V
DD
= -25V
V
DD
= -20V
-V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= -15V
I
D
= -6.5A
0.1 1 10
100
1000
30
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
40
2000
Figure 21. Capacitance vs Drain
to Source Voltage
Figure 22. Unclamped Inductive
Switching Capability
0.001 0.01 0.1 1 10 100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
-I
AS
, AVALANCHE CURRENT(A)
30
Fi g u r e 23 . M a x i m u m C o n t i n u o u s D r ai n
Current vs Case Temperature
25 50 75 100 125 150
0
5
10
15
20
25
R
θJC
= 3.5
o
C/W
V
GS
= -4.5V
V
GS
= -10V
-I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
Figure 24
110
0.1
1
10
100
DC
10ms
1ms
100us
10us
THIS AREA IS
LIMITED BY r
ds(on)
100
SINGLE PULSE
T
J
= MAX RATED
R
θJC
= 3.5
o
C/W
T
C
= 25
o
C
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
80
. F o r w a rd B i a s S a fe
Operating Area
Figure 25.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
100
1000
10000
V
GS
= -10V
SINGLE PULSE
R
θJC
= 3.5
o
C/W
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 T
C
–
125
------------------------
T
C
= 25
o
C
Single Pulse Maximum
Power Dissipation
FDD8424H Dual N & P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
8
©2013 Fairchild Semiconductor Corporation
FDD8424H Rev.1.5