Data Sheet

FDD8424H Dual N & P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
7
©2013 Fairchild Semiconductor Corporation
FDD8424H Rev.1.5
Typical Characteristics (Q2 P-Channel)
01234
0
10
20
30
40
V
GS
= -3V
V
GS
= -4V
V
GS
= -10V
V
GS
= -3.5V
V
GS
= -4.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 14. On- Region Characteristics
0 10203040
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -3V
V
GS
= -4V
V
GS
= -3.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT(A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= -6.5A
V
GS
= -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
40
80
120
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -6.5A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 18. Transfer Characteristics
12345
0
10
20
30
40
V
DS
= -5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
0.0 0.3 0.6 0.9 1.2 1.5
0.001
0.01
0.1
1
10
40
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
J
= 25°C unless otherwise noted