Data Sheet

FDD8424H Dual N & P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
4
©2013 Fairchild Semiconductor Corporation
FDD8424H Rev.1.5
Typical Characteristics (Q1 N-Channel)T
J
= 25°C unless otherwise noted
Figure 1.
01234
0
10
20
30
40
50
60
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
V
GS
= 3.0V
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On- Region Characteristics Figure 2.
0 102030405060
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 4.5V
V
GS
= 4.0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT(A)
V
GS
= 3.5V
V
GS
= 3.0V
V
GS
= 10V
N o rmali z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N or m a l i z e d O n - R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 9A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
246810
10
20
30
40
50
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= 9A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
V
GS
, GATE TO SOURCE VOLTAGE (V)
O n- Re si s t an c e vs Ga te to
Source Voltage
Figure 5. Transfer Characteristics
1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
10
20
30
40
50
60
V
DS
= 5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.3 0.6 0.9 1.2 1.5
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
60
S ou rc e t o Dr ai n D i od e
Forward Voltage vs Source Current