Data Sheet

FDD8424H Dual N & P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
3
©2013 Fairchild Semiconductor Corporation
FDD8424H Rev.1.5
Notes:
1. R
θJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined
by the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting T
J
= 25°C, N-ch: L = 0.3mH, I
AS
= 14A, V
DD
= 40V, V
GS
= 10V; P-ch: L = 0.3mH, I
AS
= -15A, V
DD
= -40V, V
GS
= -10V.
a. 40°C/W when mounted on
a 1 in
2
pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Q1
Q2
a. 40°C/W when mounted on
a 1 in
2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
Scale 1 : 1 on letter size paper
Electrical Characteristics T
J
= 25°C unless otherwise noted
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Type Min Typ Max Units
I
S
Maximum Continuous Drain to Source Diode Forward Current
Q1
Q2
20
-20
A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current (Note 2)
Q1
Q2
55
-40
A
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0V, I
S
= 9.0A (Note 2)
V
GS
= 0V, I
S
= -6.5A (Note 2)
Q1
Q2
0.87
0.88
1.2
-1.2
V
t
rr
Reverse Recovery Time
Q1
I
F
= 9.0A, di/dt = 100A/s
Q2
I
F
= -6.5A, di/dt = 100A/s
Q1
Q2
25
29
38
44
ns
Q
rr
Reverse Recovery Charge
Q1
Q2
19
29
29
44
nC