Data Sheet

FDC637BNZ N-Channel 2.5V Specified PowerTrench
®
MOSFET
www.fairchildsemi.com
4
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
Figure 7.
0.0 1.5 3.0 4.5 6.0 7.5 9.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
D
= 6.2A
V
DD
= 10V
V
DD
= 5V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
20
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
50
2000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0369121518
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
V
DS
= 0V
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
,
GATE TO SOURCE VOLTAGE (V)
I
g
, GATE LEAKAGE CURRENT(uA)
Gate Leakage Current vs Gate to
Source Voltage
Figure 10.
0.1 1 10
0.01
0.1
1
10
50
30
100us
DC
10s
1s
100ms
10ms
1ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 156
o
C/W
T
A
= 25
o
C
For w a r d Bias S a f e
Operating Area
Figure 11. Single Pulse Maximum Power Di
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 156
o
C/W
T
A
= 25
o
C
P
(PK)
, PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
0.5
ssipation
Typical Characteristics T
J
= 25°C unless otherwise noted