Data Sheet
FDC6306P
FDC6306P Rev. C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
S
y
mbol Parameter Test Conditions Min T
yp
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= -250
µ
A-20 V
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
µ
A
,
Referenced to 25
°
C-18 mV/
°
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= -16 V, V
GS
= 0 V -1
µ
A
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -8 V, V
DS
= 0 V -100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250
µ
A -0.4 -0.9 -1.5 V
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
µ
A
,
Referenced to 25
°
C3 mV/
°
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= -4.5 V, I
D
= -1.9 A
V
GS
= -4.5 V, I
D
= -1.9 A @125
°
C
V
GS
= -2.5 V, I
D
= -1.7 A
0.127
0.182
0.194
0.170
0.270
0.250
Ω
I
D(on)
On-State Drain Current V
GS
= -4.5 V, V
DS
=- 5 V -5 A
g
FS
Forward Transconductance V
DS
= -5 V, I
D
= -1.9 A 4 S
Dynamic Characteristics
C
iss
Input Capacitance 441 pF
C
oss
Output Capacitance 127 pF
C
rss
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
67 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time 6 12 ns
t
r
Turn-On Rise Time 9 18 ns
t
d(off)
Turn-Off Delay Time 14 25 ns
t
f
Turn-Off Fall Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
39ns
Q
g
Total Gate Charge 3 4.2 nC
Q
gs
Gate-Source Charge 0.7 nC
Q
gd
Gate-Drain Charge
V
DS
= -10 V, I
D
= -1.9 A,
V
GS
= -4.5 V
0.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -0.8 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= -0.8 A
(Note 2)
-0.8 -1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 130 °C/W when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140 °C/W when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180 °C/W when
mounted on a 0.0015 in
2
pad of 2 oz. copper.