Data Sheet

©2012 Fairchild Semiconductor Corporation
FDB13AN06A0 Rev. C2
www.fairchildsemi.com
5
FDB13AN06A0 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
= V
DS
, I
D
= 250µA
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED GATE
THRESHOLD VOLTAGE
-80 -40 0 40 80 120 160 200
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
-80 -40 0 40 80 120 160 200
0.9
1.0
1.1
1.2
100
1000
40
3000
C, CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
≅ C
DS
+ C
GD
C
RSS
= C
GD
0.1 1 10 60
0
2
4
6
8
10
0 5 10 15 20 25
V
GS
, GATE TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 62A
I
D
= 31A
WAVEFORMS IN
DESCENDING ORDER: