Data Sheet

©2012 Fairchild Semiconductor Corporation
FDB13AN06A0 Rev. C2
www.fairchildsemi.com
4
FDB13AN06A0 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
0.1
1
10
100
1000
1 10 100
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10µs
1ms
DC
100µs
10ms
1
10
100
0.01 0.1 1 10 100
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
-t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
V
DD
)
If R = 0
If R
≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
20
40
60
80
100
3453 7
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
80
100
0 0.5 1.0 1.5 2.0
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
10
15
20
25
0 01 20 03 04 05 06 70
30
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 10V
DRAIN TO SOURCE ON RESISTANCE(mΩ)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
=62A
-80 -40 0 40 80 120 160 200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX